Calculation and Experimental Verification of Longitudinal Spatial Hole Burning in High-Power Semiconductor Lasers
Date of Award
Master of Science in Optical Engineering
Department of Physics and Optical Engineering
Longitudinal spatial hole burning (LSHB) is believed to be one of the limiting factors in scaling the output power of high-power semiconductor lasers. In this work, a self-consistent simulation of LSHB was performed to investigate the non-uniform longitudinal photon density distribution, carrier density distribution, and gain distribution in a high-power semiconductor laser. The calculation is based on a modification to the semiconductor laser rate equations and solved using a finite difference approach, with Newton’s method employed to numerically solve the differential equations. The impact of LSHB on output power was analyzed with different parameters, including injection current, cavity length, and wavelength. Experimental verification was carried out by direct observation of spontaneous emission from a window patterned into the top contact of an 808 nm high-power semiconductor laser. The experimental results are in agreement with calculated results.
Hao, Ting, "Calculation and Experimental Verification of Longitudinal Spatial Hole Burning in High-Power Semiconductor Lasers" (2014). Graduate Theses - Physics and Optical Engineering. 2.
Computational Engineering Commons, Other Engineering Commons, Semiconductor and Optical Materials Commons